FQB8P10TM
Manufacturer:
On Semiconductor
Mfr.Part #:
FQB8P10TM
Datasheet:
Description:
MOSFETs TO-263-3 SMD/SMT P-Channel number of channels:1 3.75 W 100 V Continuous Drain Current (ID):8 A 15 nC
| Parameter | Value |
|---|---|
| Gate Charge | 15 nC |
| Gate to Source Threshold Voltage | 4 V |
| Continuous Drain Current (ID) | 8 A |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Drain to Source Resistance | 530 mΩ |
| Input capacitance | 470 pF |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Power Dissipation | 3.75 W |
| Drain to Source Breakdown Voltage (Vds) | 100 V |
| Number of Channels | 1 |
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
Out of Stock
Distributors
--
--Unit Price$--
Ext.Price$--
| Qty | Unit Price | Ext.Price |
|---|---|---|
No data | ||